PART |
Description |
Maker |
MC68HC05J3 MC68HC05J3CDW MC68HC05J3CP MC68HC05J3DW |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Motorola, Inc
|
MC68HC11KW1 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Freescale Semiconductor, Inc
|
MC68HC11G5 MC68HC11G7 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Unit
|
Freescale Semiconductor, Inc
|
MC68HC05L28 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Freescale Semiconductor, Inc
|
MC68HC705L2B MC68HC705L2CB MC68HC705L2K MC68HC05L2 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Motorola, Inc
|
MC68HC11KG4 |
MC68HC11KG4 Technical Data High-density complementary metal oxide semiconductor(HCMOS) microcontroller unit
|
MOTOROLA[Motorola, Inc]
|
ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD 170 MHz in-system prommable high density PLD 125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
MC68HC11KW1 |
High-density complementary metal oxide semiconductor HCMOS) microcontroller unit 8-BIT, EEPROM, 4 MHz, MICROCONTROLLER, PQFP100
|
Motorola Mobility Holdings, Inc.
|
JFP |
High Voltage Met Polypropylene Film Capacitor
|
jb Capacitors Company
|
ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD CRYSTAL 24.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存??? 5.5 A, 16000 V, SILICON, RECTIFIER DIODE High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V,温5℃时平均整流电流5.5A,高压,大电流,高密度,标准恢复整流 STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|